استقرار عالي الجهد BTA41 BTB41-1600V التيرستورات

Symbol

Value

Unit

I_T(RMS)

40

A

V_DRM / V_RRM

1600/1600

V

VTM

1.55

V

Symbol

Parameter

Value

Unit

I_TSM

Non repetitive surge peak on-state

Current (tp=10ms)

400

A

I²t

(tp=10ms)

800

A²S

dI/dt

I_G=2I_GT，tr≤100ns,Tj=125℃

50

A/μs

IGM

Peak gate current(tp=20us)

8

A

PG(AV)

Average gate power

1

W

Tstg

Tj

Storage temperature

Operating junction temperature

-40--+150

-40--+125

℃

Symbol

Parameter

Value

Unit

Rth (j-c)

Junction to case

TO-3P

0.9

℃/W