قدرة الزيادة العالية 400A حزمة TG-C TIRIC TG25C60
$5100-999 Piece/Pieces
$2.9≥1000Piece/Pieces
الدفع نوع: | L/C,T/T,Paypal |
إنكوترم: | FOB,CFR,CIF |
نقل: | Ocean,Land,Express,Others |
ميناء: | SHANGHAI |
$5100-999 Piece/Pieces
$2.9≥1000Piece/Pieces
الدفع نوع: | L/C,T/T,Paypal |
إنكوترم: | FOB,CFR,CIF |
نقل: | Ocean,Land,Express,Others |
ميناء: | SHANGHAI |
نموذج: YZPST-BTA25-600BW TG25C60
مكان المنشأ: الصين
IT RMS: 25A
ITSM: 300/330A
I2t: 450A2S
PGM: 10W
PGAV: 1W
IGM: 3A
VGM: 10V
Di/dt: 50A/μS
YZPST-TG25..SERIES
YZPST-BTA25-600BW TG25C60
ترياك (معزول يكتب)
TG25C/E/D هي عزلات مقولبة معزولة مناسبة لمجموعة واسعة من التطبيقات مثل النسخ ، فرن الميكروويف ، مفتاح الحالة الصلبة ،
التحكم في المحرك ، والتحكم في الضوء والتحكم في المدفأة.
انها AV 25A
قدرة الزيادة العالية 400A
معزولة الأمن AC2500V
محطات TAB
أقصى تقييمات
Symbol |
Item |
Conditions |
Ratings |
Unit |
IT RMS |
R.M.S. On-State Current |
Tc |
25 |
A |
ITSM |
Surge On-State Current |
One cycle, 50Hz/60Hz, peak, non-repetitive |
300/330 |
A |
I2t |
I2t |
Value for one cycle of surge current |
450 |
A2S |
PGM |
Peak Gate Power Dissipation |
|
10 |
W |
PGAV |
Average Gate Power Dissipation |
|
1 |
W |
IGM |
Peak Gate Current |
|
3 |
A |
VGM |
Peak Gate Voltage |
|
10 |
V |
di/dt |
Critical Rate of Rise of On-State Current |
IG=100mA,Tj=25 VD=1/2VDRM dIG/dt=1A/μS |
50 |
A/μS |
Tj |
Operating Junction Temperature |
|
-25~+125 |
℃ |
Tstg |
Storage Temperature |
|
-40~+125 |
℃ |
VISO |
Isolation Breakdown Voltage R.M.S. |
A.C. 1 minute |
2500 |
V |
|
Mounting Torque M4 |
Recommended Value 1.0 ~1.4(10~14) |
14 |
kgf.CM |
TJ = 25 إلا إذا خلاف ذلك محدد
Symbol | Item | Ratings | Unit | |||
TG25C60 | TG25C80 | TG25C100 | TG25C12 | V | ||
VDRM | Repetitive Peak Off-State Voltage | 400 | 800 | 1000 | 1200 | V |
Symbol |
Item |
Conditions |
Ratings |
Unit |
|
IDRM |
Reptitive Peak Off-State Current, max |
VD=VDRM, Single phase, half wave, Tj=125℃ |
5 |
mA |
|
VTM |
Peak On-State Voltage, max |
On-State Current On-State Current √2X IT (RMS),Inst. measurement |
1.4 |
V |
|
I GT1 + |
1 |
Gate Trigger Current, max |
Tj =25℃, IT=1A, VD=6V |
50 |
mA |
I GT1 - |
2 |
Tj =25℃, IT=1A, VD=6V |
50 |
mA |
|
I GT3 + |
3 |
|
- |
mA |
|
I GT3 + |
4 |
Tj =25℃, IT=1A, VD=6V |
50 |
mA |
|
V GT1+ |
1 |
Gate Trigger Voltage, max |
Tj =25℃, IT=1A, VD=6V |
3 |
V |
V GT1- |
2 |
Tj =25℃, IT=1A, VD=6V |
3 |
V |
|
V GT3+ |
3 |
|
- |
V |
|
V GT3- |
4 |
Tj =25℃, IT=1A, VD=6V |
3 |
|
|
VGD |
Non-Trigger Gate Voltage, min |
Tj =25℃, VD= 1/2VRRM |
0.2 |
V |
|
tgt |
Turn On Time, max. |
IT=(RMS),IG= 100mA,VD=1/2VDR M,Tj=25℃,dIG/dt=1A/μS |
10 |
V |
|
dv/dt |
Critical Rate of Rise on-State Voltage,min. |
Tj=25℃,VD=2/3VDRM Exoponential wave. |
20 |
V/μS |
|
(dv/dt) c |
Critical Rate of Rise off-State Voltage at commutation, min |
Tj=25℃,VD=2/3VDRM di/dtc=15A/μS |
5 |
V/μS |
|
IH |
Holding Current, typ. |
Tj =25℃ |
30 |
mA |
|
Rth(j-c) |
Thermal Impedance, max |
Junction to case |
1.5 |
℃/W |
Privacy statement: Your privacy is very important to Us. Our company promises not to disclose your personal information to any external company with out your explicit permission.
Fill in more information so that we can get in touch with you faster
Privacy statement: Your privacy is very important to Us. Our company promises not to disclose your personal information to any external company with out your explicit permission.