40A BTA40-600B TG40C60 معزولة ثلاثيات مقولبة
$2.6300-999 Piece/Pieces
$2.1≥1000Piece/Pieces
الدفع نوع: | L/C,T/T,Paypal |
إنكوترم: | FOB,CFR,CIF |
نقل: | Ocean,Land,Express,Others |
ميناء: | SHANGHAI |
$2.6300-999 Piece/Pieces
$2.1≥1000Piece/Pieces
الدفع نوع: | L/C,T/T,Paypal |
إنكوترم: | FOB,CFR,CIF |
نقل: | Ocean,Land,Express,Others |
ميناء: | SHANGHAI |
نموذج: YZPST-BTA40-600B TG40C60
علامة تجارية: YZPST
مكان المنشأ: الصين
IT RMS: 40A
PG AV: 1W
ITSM: 400 A
I2t: 880A2S
PGM: 10W
IGM: 8A
VGM: 10V
بيع الوحدات | : | Piece/Pieces |
نوع الحزمة | : | 1. التغليف المضاد للإلكتروستاتيكي 2. صندوق الكرتون 3. جديلة |
تحميل | : |
ترياك ( نوع معزول )
YZPST-BTA40-600B TG40C60
TG 40 C/E/D عزلات ثلاثيات مقولبة معزولة
مناسبة لمجموعة واسعة من التطبيقات مثل
ناسخ ، فرن الميكروويف ، مفتاح الحالة الصلبة ،
التحكم في المحرك ، والتحكم في الضوء والسخان
يتحكم.
انها AV 40 أ
قدرة الزيادة العالية 400A
معزولة الأمن AC2500V
محطات TAB
أقصى تصنيفات
Symbol |
Item |
Conditions |
Ratings |
Unit |
IT RMS |
R.M.S. On-State Current |
Tc |
40 |
A |
ITSM |
Surge On-State Current |
One cycle, 50Hz/, peak, non-repetitive |
400 |
A |
I2t |
I2t |
Value for one cycle of surge current |
880 |
A2S |
PGM |
Peak Gate Power Dissipation |
|
10 |
W |
PG AV |
Average Gate Power Dissipation |
|
1 |
W |
IGM |
Peak Gate Current |
|
8 |
A |
VGM |
Peak Gate Voltage |
|
10 |
V |
di/dt |
Critical Rate of Rise of On-State Current |
IG=100mA,Tj=25 VD=1/2VDRM dIG/dt=1A/μS |
50 |
A/μS |
Tj |
Operating Junction Temperature |
|
-25~+125 |
℃ |
Tstg |
Storage Temperature |
|
-40~+125 |
℃ |
VISO |
Isolation Breakdown Voltage R.M.S. |
A.C.1 minute |
2500 |
V |
|
Mounting Torque M4 |
Recommended Value 1.0 ~1.4(10~14) |
14 |
kgf.CM |
أقصى تصنيفات
TJ = 25 ما لم ينص على خلاف ذلك
Symbol |
Item |
Ratings |
Unit |
|||
TG40C60 |
TG40C80 |
TG40C100 |
TG40C12 |
V |
||
VDRM |
Repetitive Peak Off-State Voltage |
600 |
800 |
1000 |
1200 |
V |
الخصائص الكهربائية
Symbol |
Item |
Conditions |
Ratings |
Unit |
|
IDRM |
Reptitive Peak Off-State Current, max |
VD=VDRM, Single phase, half wave, Tj=125℃ |
5 |
mA |
|
VTM |
Peak On-State Voltage, max |
On-State Current On-State Current √2X IT (RMS),Inst. measurement |
1.55 |
V |
|
I GT1 + |
1 |
Gate Trigger Current, max |
Tj =25℃, IT=1A, VD=6V |
50 |
mA |
I GT1 - |
2 |
Tj =25℃, IT=1A, VD=6V |
50 |
mA |
|
I GT3 + |
3 |
|
- |
mA |
|
I GT3 + |
4 |
Tj =25℃, IT=1A, VD=6V |
50 |
mA |
|
V GT1+ |
1 |
Gate Trigger Voltage, max |
Tj =25℃, IT=1A, VD=6V |
3 |
V |
V GT1- |
2 |
Tj =25℃, IT=1A, VD=6V |
3 |
V |
|
V GT3+ |
3 |
|
- |
V |
|
V GT3- |
4 |
Tj =25℃, IT=1A, VD=6V |
3 |
|
|
VGD |
Non-Trigger Gate Voltage, min |
Tj =25℃, VD=1/2VRRM |
0.2 |
V |
|
tgt |
Turn On Time, max. |
IT=(RMS),IG=100mA,VD=1/2VDRM,Tj=25℃,dIG/dt=1A/μS |
10 |
V |
|
dv/dt |
Critical Rate of Rise on-State Voltage,min. |
Tj=25℃,VD=2/3VDRM Exoponential wave. |
500 |
V/μS |
|
(dv/dt) c |
Critical Rate of Rise off-State Voltage at commutation, min |
Tj=25℃,VD=2/3VDRM di/dtc=15A/μS |
5 |
V/μS |
|
IH |
Holding Current, typ. |
Tj =25℃ |
60 |
mA |
|
Rth(j-c) |
Thermal Impedance, max |
Junction to case |
0.9 |
℃/W |
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