المرحلة المباشرة التحكم الثايرستور DCR1278
أحصل على آخر سعرالدفع نوع: | L/C,T/T,Paypal |
إنكوترم: | FOB,CFR,CIF |
نقل: | Ocean,Air |
ميناء: | SHANGHAI |
الدفع نوع: | L/C,T/T,Paypal |
إنكوترم: | FOB,CFR,CIF |
نقل: | Ocean,Air |
ميناء: | SHANGHAI |
نموذج: YZPST-DCR1278
علامة تجارية: YZPST
ارتفاع السلطة الثايرستور المرحلة السيطرة
YZPST-DCR1278
الميزات: قدرة عالية dV / dt . حظر الكابولي حتى 4200 فولت ، تكوين بوابة التضخيم المركزي ، أقصى وقت مضمون لإيقاف التشغيل ، كل البنية المنتشرة
. جهاز تجميع الضغط
Parameter |
Symbol |
Min. |
Max. |
Typ. |
Units |
Conditions |
Average value of on-state current |
IT(AV) |
|
1100 |
|
A |
Sinewave,180o conduction,Tc=65oC |
RMS value of on-state current |
ITRMS |
|
2000 |
|
A |
Nominal value |
Peak one cPSTCle surge (non repetitive) current |
ITSM |
|
-
16.4 |
|
KA
KA |
8.3 msec (60Hz), sinusoidal wave- shape, 180o conduction, Tj = 125 oC 10.0 msec (50Hz), sinusoidal wave- shape, 180o conduction, Tj = 125 oC |
I square t |
I2t |
|
1.35x106 |
|
A2s |
8.3 msec and 10.0 msec |
Latching current |
IL |
|
300 |
|
mA |
VD = 24 V; RL= 12 ohms |
Holding current |
IH |
|
- |
|
mA |
VD = 24 V; I = 2.5 A |
Peak on-state voltage |
VTM |
|
2.2 |
|
V |
ITM = 2900 A; Duty cPSTCle £ 0.01%; Tj = 25 oC |
Critical rate of rise of on-state current (5, 6) |
di/dt |
|
- |
|
A/ms |
Switching from VDRM£ 1000 V, non-repetitive |
Critical rate of rise of on-state current (6) |
di/dt |
|
100 |
|
A/ms |
Switching from VDRM£ 1000 V |
الخصائص الكهربائية وتصنيفاتها (تابع)
المحاصرة
Parameter |
Symbol |
Min. |
Max. |
Typ. |
Units |
Conditions |
Peak gate power dissipation |
PGM |
|
- |
|
W |
tp = 40 us |
Average gate power dissipation |
PG(AV) |
|
- |
|
W |
|
Peak gate current |
IGM |
|
- |
|
A |
|
Gate current required to trigger all units |
IGT |
|
- 400 - |
|
mA mA mA |
VD = 6 V;RL = 3 ohms;Tj = -40 oC VD = 6 V;RL = 3 ohms;Tj = +25 oC VD = 6 V;RL = 3 ohms;Tj = +125oC |
Gate voltage required to trigger all units
|
VGT |
|
- 4.0 -
|
|
V V V |
VD = 6 V;RL = 3 ohms;Tj = -40 oC VD = 6 V;RL = 3 ohms;Tj = 0-125oC VD = Rated VDRM; RL = 1000 ohms; Tj = + 125 oC |
Peak negative voltage |
VGRM |
|
- |
|
V |
|
ديناميكي
Parameter |
Symbol |
Min. |
Max. |
Typ. |
Units |
Conditions |
Delay time |
td |
|
- |
- |
ms |
ITM = 50 A; VD = Rated VDRM Gate pulse: VG = 20 V; RG = 20 ohms; tr = 0.1 ms; tp = 20 ms |
Turn-off time (with VR = -50 V) |
tq |
|
- |
- |
ms |
ITM = 1000 A; di/dt = 25 A/ms; VR³ -50 V; Re-applied dV/dt = 20 V/ms linear to 80% VDRM; VG = 0; Tj = 125 oC; Duty cPSTCle ³ 0.01% |
Reverse recovery charge |
Qrr |
|
* |
|
mC |
ITM = 1000 A; di/dt = 25 A/ms; VR³ -50 V |
* للحصول على الحد الأقصى المضمون. قيمة ، الاتصال المصنع.
الخصائص الحرارية والميكانيكية وتصنيفاتها
Parameter |
Symbol |
Min. |
Max. |
Typ. |
Units |
Conditions |
Operating temperature |
Tj |
-40 |
+125 |
|
oC |
|
Storage temperature |
Tstg |
-40 |
+150 |
|
oC |
|
Thermal resistance - junction to case |
RQ (j-c) |
|
- - |
|
oC/W |
Double sided cooled Single sided cooled |
Thermal resistamce - case to sink |
RQ (c-s) |
|
- - |
|
oC/W |
Double sided cooled * Single sided cooled * |
Thermal resistamce - junction to sink |
RQ (j-s) |
|
0.024 - |
|
oC/W |
Double sided cooled * Single sided cooled * |
Mounting force |
P |
20 |
24 |
|
kN |
|
Weight |
W |
|
|
- |
g |
|
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