C458PB السلطة العليا العاكس الثايرستور

Device Type

VRRM (1)

VDRM (1)

VRSM (1)

C458PB

  1200

  1200

  1300

Repetitive peak reverse leakage and off state leakage

I_{RRM /} I_DRM

10 mA

35 mA (3)

Critical rate of voltage rise

dV/dt (4)

600V/msec

Parameter

Symbol

Min.

Max.

Typ.

Units

Conditions

Average value of on-state current

I_T(AV)

  1200

A

T_c=85^oC

RMS value of on-state current

I_TRMS

  1570

A

Nominal value

Peak one cPSTCle surge

(non repetitive) current

I_TSM

18400

16900

A

A

8.3 msec (60Hz), sinusoidal wave-

shape, 180^o conduction, T_j = 125 ^oC

10.0 msec (50Hz), sinusoidal wave-

shape, 180^o conduction, T_j = 125 ^oC

I square t

I²t

1.66x10⁶

A²s

8.3 msec and 10.0 msec

Latching current

I_L

     1000

mA

V_D = 24 V; R_L= 12 ohms

Holding current

I_H

     500

mA

V_{D =} 24 V; I = 2.5 A

Peak on-state voltage

V_TM

     2.60

V

I_TM =3000 A; Duty cPSTCle £ 0.01%

Critical rate of rise of on-state

current (5, 6)

di/dt

      600

A/ms

Switching from V_DRM £ 1000 V,

non-repetitive

Parameter

Symbol

Min.

Max.

Typ.

Units

Conditions

Peak gate power dissipation

P_GM

200

W

t_p = 40 us

Average gate power dissipation

P_G(AV)

5

W

Peak gate current

I_GM

10

A

Gate current required to trigger all units

I_GT

300

150

125

mA

mA

mA

V_D = 6 V;R_L = 3 ohms;T_j = -40 ^oC

V_D = 6 V;R_L = 3 ohms;T_j = +25 ^oC

V_D = 6 V;R_L = 3 ohms;T_j = +125^oC

Gate voltage required to trigger all units

V_GT

0.30

5

3

V

V

V

V_D = 6 V;R_L = 3 ohms;T_j = -40 ^oC

V_D = 6 V;R_L = 3 ohms;T_j = 0-125^oC

V_D = Rated V_DRM; R_L = 1000 ohms;

T_j = + 125 ^oC

Peak negative voltage

V_GRM

5

V

Parameter

Symbol

Min.

Max.

Typ.

Units

Conditions

Delay time

t_d

    1.5

0.7

ms

I_TM = 500 A; V_D = Rated V_DRM

Gate pulse: V_G = 20 V; R_G = 20 ohms; t_r = 0.1 ms; t_p = 20 ms

Turn-off time (with V_R = -50 V)

t_q

   19

ms

I_TM = 1000 A; di/dt = 25 A/ms;

V_R ³ -50 V; Re-applied dV/dt = 200 V/ms linear to 80% V_DRM; V_G = 0;

T_j = 125 ^oC; Duty cPSTCle ³ 0.01%

Reverse recovery charge

Q_rr

      *

2000

mC

I_TM = 1000 A; di/dt = 25 A/ms;

V_R ³ -50 V

Parameter

Symbol

Min.

Max.

Typ.

Units

Conditions

Operating temperature

T_j

-40

+125

^oC

Storage temperature

T_stg

-40

+150

^oC

Thermal resistance - junction to case

R_{Q (j-c)}

0.023

0.046

^oC/W

Double sided cooled

Single sided cooled

Thermal resistamce - case to sink

R_{Q (j-c)}

0.010

0.020

^oC/W

Double sided cooled *

Single sided cooled *

Mounting force

P

19.5

21

kN