عالية الطاقة العاكس الثايرستور C458PB

Parameter

Symbol

Min.

Max.

Typ.

Units

Conditions

Average value of on-state current

IT(AV)

640

A

Sinewave,180o

conduction,T =60oC

c

RMS value of on-state current

ITRMS

1005

A

Nominal value

Peak one cPSTCle surge

(non repetitive) current

ITSM

-

8.5

KA KA

8.3 msec (60Hz), sinusoidal wave- shape, 180o  conduction, T = 125

j

oC

10.0 msec (50Hz), sinusoidal wave-

shape, 180o  conduction, T = 125

j

oC

I square t

I2t

0.36x106

A2s

8.3 msec and 10.0 msec

Latching current

IL

600

mA

VD  = 24 V; RL= 12 ohms

Holding current

IH

200

mA

VD = 24 V; I = 2.5 A

Peak on-state voltage

VTM

3.6

V

ITM  = 1800 A; Duty cPSTCle

0.01%; T = 25 oC

j

Critical rate of rise of on-state current (5, 6)

di/dt

-

A/  s

Switching from VDRM     1000 V, non-repetitive

Critical rate of rise of on-state current (6)

di/dt

100

A/  s

Switching from VDRM     1000 V

Parameter

Symbol

Min.

Max.

Typ.

Units

Conditions

Peak gate power dissipation

PGM

150

W

tp = 40 us

Average gate power dissipation

PG(AV)

5

W

Peak gate current

IGM

-

A

Gate current required to trigger all units

IGT

-

300

-

mA mA mA

V   = 6 V;R  = 3 ohms;T  = -40 oC

D                        L                                    j

V   = 6 V;R  = 3 ohms;T  = +25 oC

D                        L                                    j

V   = 6 V;R  = 3 ohms;T  = +125oC

D                        L                                    j

Gate voltage required to trigger all units

V

-

3.0

-

V V V

V   = 6 V;R  = 3 ohms;T  = -40 oC

D                        L                                    j

V   = 6 V;R  = 3 ohms;T  = 0-125oC

D                        L                                    j

VD  = Rated VDRM; RL = 1000 ohms;

T = + 125 oC

j

Peak negative voltage

VGRM

5

V

Parameter

Symbol

Min.

Max.

Typ.

Units

Conditions

Delay time

td

-

0.5

s

ITM  = 50 A; VD = Rated VDRM Gate pulse: VG = 20 V; RG  = 20 ohms; tr = 0.1   s; tp = 20   s

Turn-off time (with VR  = -50 V)

tq

-

600

s

ITM  = 1000 A; di/dt = 25 A/  s;

VR        -50 V; Re-applied dV/dt = 20

V/  s linear to 80% VDRM; VG = 0;

T = 125 oC; Duty cPSTCle

j

0.01%

Reverse recovery charge

Qrr

*

C

ITM  = 1000 A; di/dt = 25 A/  s; VR        -50 V

Parameter

Symbol

Min.

Max.

Typ.

Units

Conditions

Operating temperature

Tj

-40

+125

oC

Storage temperature

Tstg

-40

+125

oC

Thermal resistance - junction to case

R  (j-c)

0.022

0.052

o

C/W

Double sided cooled

Single sided cooled

Thermal resistamce - case to sink

R  (c-s)

0.004

0.008

o

C/W

Double sided cooled * Single sided cooled *

Thermal resistamce - junction to sink

R  (j-s)

-

-

o

C/W

Double sided cooled * Single sided cooled *

Mounting force

P

18

22

kN

Weight

W

-

g