Fast Recovery Stud Diode 1800V

Parameter

Symbol

Min.

Max.

Typ.

Units

Conditions

Repetitive peak reverse voltage

V_RRM

1800

V

Non repetitive peak reverse voltage

V_RSM

1900

V

Max. average forward current

I_F(AV)

20

A

Sinewave,180^o conduction,T_c=100^oC

Max. RMS forward current

I_F(RMS)

33

A

Nominal value; T_c=100^oC

Max. peak, one-cycle forward,

non-repetitive surge current

I_FSM

0.3

kA

10.0 msec (50Hz), half sinewave,

T_vj = T_vj max, V_RM = 0.6V_RRM

Maximum I²t for fusing

I²t

4.9

kA²s

Max. forward voltage drop

V_F

2.15

V

I_F = 650A; T_vj = T_vj max

Threshold voltage

V_TO

1.1

V

I_F < 500A

Slope resistance

r_T

1.5

mΩ

Parameter

Symbol

Min.

Max.

Typ.

Units

Conditions

Repetitive peak reverse leakage and off state

I_RRM

70

mA

T_vj = T_vj max

Operating temperature

T_j

-40

+140

^oC

Storage temperature

T_stg

-40

+150

^oC

Maximum Reverse Recovery Time

T_rr

2.2

μS

Reverse recovery charge

Q_rr

870

μAc

Thermal resistance - junction to case

R_{Q (j-c)}

-

-

0.26

^oC/W

Thermal resistamce - case to heatsink

R_{Q (c-s)}

-

-

0.04

^oC/W

Mounting force

P

20

Nm

± 20%

Weight

W

-

-

-

g

About

Case style

-

See Outline Table