BTA208x-600E معدل DV/DT High DV مع مقاومة قوية للواجهة الكهرومغناطيسية

symbol

value

unit

IT(RMS)

8

A

VDRM/VRRM

600/800

V

VTM

≤1.5

V

Symbol

Parameter

Value

Unit

ITSM

Non repetitive surge peak on-state

Current (tp=10ms)

80

A

I2t

(tp=10ms)

32

A2S

dI/dt

IG=2IGT ，tr≤100ns,Tj=125℃

50

A/ μs

IGM

Peak gate current(tp=20us)

2

A

PG(AV)

Average gate power

1=0.5

W

Tstg

Tj

Storage temperature

Operating junction temperature

-40--+125

-40--+125

℃

Viso

AC RMS App lied for 1 minute Between lead and case

1800

V

I2t value for fusing (tp=10ms)

I2t

32

A2s

Critical rate of rise of on-state current(IG=2 × IGT)

dI/dt

50

A/ μs

Peak gate current

IGM

4

A

Average gate power dissipation

PG(AV)

1

W

Peak gate power

PGM

5

W

Ⅱ

70

90

dV/dt

VD=2/3VDRM   Tj=125℃ Gate open

MIN

200

500

V/ µs